63-8415-49 ［Discontinued］SIR158DP-T1-RE3 N-Channel MOSFET, 60 A, 30 V, 8-Pin SO Vishay SIR158DP-T1-RE3
Features
- N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:60 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:2.3 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:83 W
- Typical Turn-Off Delay Time:47 ns
- CODE No.:134-9718
| Order No. | 63-8415-49 | |
|---|---|---|
| Model No. | SIR158DP-T1-RE3 | |
| Standard price |
JPY: 1,070
USD: 6.66
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |