63-8415-47 SI3493DDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V TrenchFET, 6-Pin TSOP Vishay SI3493DDV-T1-GE3
Features
- P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1bag(25pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:51 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:TSOP
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.6 W
- Number of Elements per Chip:1
- CODE No.:134-9713
| Order No. | 63-8415-47 | |
|---|---|---|
| Model No. | SI3493DDV-T1-GE3 | |
| Standard price |
JPY: 1,110
USD: 6.96
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|