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  • 63-8415-46 [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3
  • AXEL GLOBALAXEL GLOBALnit"> [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3 63-8415-46 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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    • 63-8415-46 [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3
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    • 63-8415-46 [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3
    Vishay

    63-8415-46 [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3

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    • [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3

    Features

    • Dual N-Channel MOSFET, TrenchFET® Gen IV, Vishay Semiconductor

    SpecSpec class="init"> [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3 63-8415-46 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
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    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 63-8415-46 [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
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    • RS Components
    • 63-8415-46 [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3
    Vishay

    63-8415-46 [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3

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    • [Discontinued]SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3

    特徴

    • Dual N-Channel MOSFET, TrenchFET® Gen IV, Vishay Semiconductor

    仕様

    • Quantity:1bag(5pieces)
    • Channel Type:N
    • Maximum Continuous Drain Current:30 A
    • Maximum Drain Source Voltage:40 V
    • Maximum Drain Source Resistance:16 mΩ
    • Maximum Gate Threshold Voltage:3.5V
    • Minimum Gate Threshold Voltage:2.5V
    • Maximum Gate Source Voltage:-20 V, +20 V
    • Package Type:SO
    • Mounting Type:Surface Mount
    • Pin Count:8
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:48 W
    • Dimensions:6.25 x 5.26 x 1.12mm
    • CODE No.:134-9711
    •  
    アズワン品番 63-8415-46
    型番 SQJB42EP-T1_GE3
    標準価格 JPY: 650 USD: 4.04
    Excange rate 1USD= 160.72JPY
    Valid price in Japan
    入り数 1bag(5pieces)
      <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
    Stock in Japan -

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