63-8415-43 SUP50020E-GE3 N-Channel MOSFET, 120 A, 60 V, 3 + Tab-Pin TO-220AB Vishay SUP50020E-GE3
Features
- N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
Spec
- Quantity:1bag(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:2.8 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:375 W
- Minimum Operating Temperature:-55 °C
- CODE No.:134-9705
| Order No. | 63-8415-43 | |
|---|---|---|
| Model No. | SUP50020E-GE3 | |
| Standard price |
JPY: 1,680
USD: 10.53
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|