63-8415-39 SIRA88DP-T1-GE3 N-Channel MOSFET, 45.5 A, 30 V TrenchFET, 8-Pin SO Vishay SIRA88DP-T1-GE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:45.5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:10 mΩ
- Maximum Gate Threshold Voltage:2.4V
- Minimum Gate Threshold Voltage:1.1V
- Maximum Gate Source Voltage:+20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:25 W
- Minimum Operating Temperature:-55 °C
- CODE No.:134-9696
| Order No. | 63-8415-39 | |
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| Model No. | SIRA88DP-T1-GE3 | |
| Standard price |
JPY: 2,440
USD: 15.18
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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