63-8414-62 ［Discontinued］ON Semiconductor NGTB40N120S3WG IGBT, 160 A 1200 V, 3-Pin TO-247 NGTB40N120S3WG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1piece
- Maximum Continuous Collector Current:160 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±30V
- Maximum Power Dissipation:454 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:16.25mm
- Width:5.3mm
- Height:21.34mm
- Dimensions:16.25 x 5.3 x 21.34mm
- Minimum Operating Temperature:-55 °C
- CODE No.:134-9557
| Order No. | 63-8414-62 | |
|---|---|---|
| Model No. | NGTB40N120S3WG | |
| Standard price |
JPY: 750
USD: 4.70
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |