63-8412-75 ［Discontinued］SUM50020E-GE3 N-Channel MOSFET, 120 A, 60 V, 8-Pin D2PAK Vishay SUM50020E-GE3
Features
- N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
Spec
- Quantity:1set(800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:2.6 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:375 W
- Minimum Operating Temperature:-55 °C
- CODE No.:134-9166
| Order No. | 63-8412-75 | |
|---|---|---|
| Model No. | SUM50020E-GE3 | |
| Standard price |
JPY: 214,000
USD: 1,341.44
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(800pieces) | |
|
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| Stock in Japan | - | |