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取扱点数300万点

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• 63-8412-74 SIRA90DP-T1-RE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO Vishay　SIRA90DP-T1-RE3

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• 63-8412-74 SIRA90DP-T1-RE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO Vishay　SIRA90DP-T1-RE3

Vishay

63-8412-74　SIRA90DP-T1-RE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO Vishay　SIRA90DP-T1-RE3

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特徴

• N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

Spec

• Quantity:1set(3000pieces)
• Channel Type:N
• Maximum Continuous Drain Current:100 A
• Maximum Drain Source Voltage:30 V
• Maximum Drain Source Resistance:1.15 mΩ
• Maximum Gate Threshold Voltage:2V
• Minimum Gate Threshold Voltage:0.8V
• Maximum Gate Source Voltage:+20 V
• Package Type:SO
• Mounting Type:Surface Mount
• Pin Count:8
• Channel Mode:Enhancement
• Category:Power MOSFET
• Maximum Power Dissipation:104 W
• Minimum Operating Temperature:-55 °C
• CODE No.:134-9165
•  

Order No.	63-8412-74
Model No.	SIRA90DP-T1-RE3
Standard price	JPY: 554,000 USD: 3,446.99 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1set(3000pieces)
Stock in Japan
Supplier Stock

Quote

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取扱点数300万点

How to use

English China Indonesia Korea Thailand Vietnam

Contact us

すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products

Contact us

Quote Other Requests

• AXEL GLOBAL
• カテゴリ一覧
• Lab Instruments & Supplies
• Electronic/Electrical Parts and Controll Equipments
• Electronics Components, Power & Connectors
• Semiconductors
• Discrete Semiconductors
• 63-8412-74 SIRA90DP-T1-RE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO Vishay　SIRA90DP-T1-RE3

• AXEL GLOBAL
• カテゴリ一覧
• Lab Instruments & Supplies
• Electronic/Electrical Parts and Controll Equipments
• RS Components
• 63-8412-74 SIRA90DP-T1-RE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO Vishay　SIRA90DP-T1-RE3

Vishay

63-8412-74　SIRA90DP-T1-RE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO Vishay　SIRA90DP-T1-RE3

• 印刷

• PDF

• 

特徴

• N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

仕様

• Quantity:1set(3000pieces)
• Channel Type:N
• Maximum Continuous Drain Current:100 A
• Maximum Drain Source Voltage:30 V
• Maximum Drain Source Resistance:1.15 mΩ
• Maximum Gate Threshold Voltage:2V
• Minimum Gate Threshold Voltage:0.8V
• Maximum Gate Source Voltage:+20 V
• Package Type:SO
• Mounting Type:Surface Mount
• Pin Count:8
• Channel Mode:Enhancement
• Category:Power MOSFET
• Maximum Power Dissipation:104 W
• Minimum Operating Temperature:-55 °C
• CODE No.:134-9165
•  

アズワン品番	63-8412-74
型番	SIRA90DP-T1-RE3
標準価格	JPY: 554,000 USD: 3,446.99 Excange rate 1USD= 160.72JPY Valid price in Japan
入り数	1set(3000pieces)
在庫数
サプライヤ在庫

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