63-8412-74 SIRA90DP-T1-RE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO Vishay SIRA90DP-T1-RE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:1.15 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:0.8V
- Maximum Gate Source Voltage:+20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:104 W
- Minimum Operating Temperature:-55 °C
- CODE No.:134-9165
| Order No. | 63-8412-74 | |
|---|---|---|
| Model No. | SIRA90DP-T1-RE3 | |
| Standard price |
JPY: 576,000
USD: 3,610.61
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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