63-8412-73 SIRA88DP-T1-GE3 N-Channel MOSFET, 45.5 A, 30 V TrenchFET, 8-Pin SO Vishay SIRA88DP-T1-GE3
特徴
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
仕様
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:45.5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:10 mΩ
- Maximum Gate Threshold Voltage:2.4V
- Minimum Gate Threshold Voltage:1.1V
- Maximum Gate Source Voltage:+20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:25 W
- Minimum Operating Temperature:-55 °C
- CODE No.:134-9164
| Order No. | 63-8412-73 | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 型番 | SIRA88DP-T1-GE3 | ||||||||||||||
| Standard price |
JPY: 126,000
USD: 783.97
Excange rate 1USD= 160.72JPY
Valid price in Japan |
||||||||||||||
| Quantity | 1set(3000pieces) | ||||||||||||||
| Stock in Japan |
|
||||||||||||||
Supplier StockSupplier Stock"init">
63-8412-73 SIRA88DP-T1-GE3 N-Channel MOSFET, 45.5 A, 30 V TrenchFET, 8-Pin SO Vishay SIRA88DP-T1-GE3特徴
仕様
| |||||||||||||||