63-8412-72 SIR692DP-T1-RE3 N-Channel MOSFET, 24.2 A, 250 V, 8-Pin SO Vishay SIR692DP-T1-RE3
特徴
- N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
仕様
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:24.2 A
- Maximum Drain Source Voltage:250 V
- Maximum Drain Source Resistance:67 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:104 W
- Typical Turn-Off Delay Time:14 ns
- CODE No.:134-9163
| アズワン品番 | 63-8412-72 | |
|---|---|---|
| 型番 | SIR692DP-T1-RE3 | |
| 標準価格 |
JPY: 669,000
USD: 4,193.57
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| 入り数 | 1set(3000pieces) | |
| 在庫数 |
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