63-8412-71 ［Discontinued］SIR690DP-T1-RE3 N-Channel MOSFET, 34.4 A, 200 V, 8-Pin SO Vishay SIR690DP-T1-RE3
Features
- N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:34.4 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:39 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:104 W
- Minimum Operating Temperature:-55 °C
- CODE No.:134-9162
| Order No. | 63-8412-71 | |
|---|---|---|
| Model No. | SIR690DP-T1-RE3 | |
| Standard price |
JPY: 427,000
USD: 2,656.79
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |