63-8412-68 SIR632DP-T1-RE3 N-Channel MOSFET, 29 A, 150 V, 8-Pin SO Vishay SIR632DP-T1-RE3
Features
- N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:29 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:41 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:69.5 W
- Typical Turn-On Delay Time:9 ns
- CODE No.:134-9159
| Order No. | 63-8412-68 | |
|---|---|---|
| Model No. | SIR632DP-T1-RE3 | |
| Standard price |
JPY: 459,000
USD: 2,877.20
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|