63-8412-67 ［Discontinued］SIR626DP-T1-RE3 N-Channel MOSFET, 100 A, 60 V TrenchFET, 8-Pin SO Vishay SIR626DP-T1-RE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:2.6 mΩ
- Maximum Gate Threshold Voltage:3.4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:104 W
- Typical Gate Charge @ Vgs:68 nC @ 10 V
- CODE No.:134-9158
| Order No. | 63-8412-67 | |
|---|---|---|
| Model No. | SIR626DP-T1-RE3 | |
| Standard price |
JPY: 418,000
USD: 2,620.20
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |