63-8412-64 SI3493DDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V TrenchFET, 6-Pin TSOP Vishay SI3493DDV-T1-GE3
Features
- P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:51 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:TSOP
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.6 W
- Minimum Operating Temperature:-55 °C
- CODE No.:134-9155
| Order No. | 63-8412-64 | |
|---|---|---|
| Model No. | SI3493DDV-T1-GE3 | |
| Standard price |
JPY: 89,300
USD: 555.63
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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