63-8412-63 ［Discontinued］SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay SQJB42EP-T1_GE3
Features
- Dual N-Channel MOSFET, TrenchFET® Gen IV, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:16 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:48 W
- Typical Turn-Off Delay Time:21 ns
- CODE No.:134-9154
| Order No. | 63-8412-63 | |
|---|---|---|
| Model No. | SQJB42EP-T1_GE3 | |
| Standard price |
JPY: 196,000
USD: 1,228.61
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |