63-8406-05 [Discontinued]RQ3G100GNTB N-Channel MOSFET, 10 A, 40 V RQ3G100GN, 8-Pin HSMT ROHM RQ3G100GNTB
Features
- N-Channel MOSFET Transistors, ROHM
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:10 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:18.3 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:HSMT
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET, Switching MOSFET
- Maximum Power Dissipation:2 W
- Maximum Operating Temperature:+150 °C
- CODE No.:177-7959
| Order No. | 63-8406-05 | |
|---|---|---|
| Model No. | RQ3G100GNTB | |
| Standard price |
JPY: 101,000
USD: 633.11
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]RQ3G100GNTB N-Channel MOSFET, 10 A, 40 V RQ3G100GN, 8-Pin HSMT ROHM RQ3G100GNTB](https://aimg.as-1.co.jp/c/63/8406/05/63840605.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)