63-8406-03 ［Discontinued］RQ3E120ATTB P-Channel MOSFET, 39 A, 30 V RQ3E120AT, 8-Pin HSMT ROHM RQ3E120ATTB
Features
- P-Channel MOSFET Transistors, ROHM
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:39 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:11.3 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:HSMT
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET, Switching MOSFET
- Maximum Power Dissipation:20 W
- Number of Elements per Chip:1
- CODE No.:177-7957
| Order No. | 63-8406-03 | |
|---|---|---|
| Model No. | RQ3E120ATTB | |
| Standard price |
JPY: 156,000
USD: 977.87
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |