63-8400-08 IRL6372TRPBF Dual N-Channel MOSFET, 8.1 A, 30 V HEXFET, 8-Pin SOIC Infineon IRL6372TRPBF
Features
- Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:8.1 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:23 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-6026
| Order No. | 63-8400-08 | |
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| Model No. | IRL6372TRPBF | |
| Standard price |
JPY: 295,000
USD: 1,849.18
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(4000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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