63-8400-07 [Discontinued]IRL6297SDTRPBF Dual N-Channel MOSFET, 15 A, 20 V DirectFET, HEXFET, 3 + Tab-Pin SA Infineon IRL6297SDTRPBF
Features
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
Spec
- Quantity:1set(4800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:15 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:6.9 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SA
- Mounting Type:Surface Mount
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:25 W
- Typical Turn-Off Delay Time:41 ns
- CODE No.:168-6025
| Order No. | 63-8400-07 | |
|---|---|---|
| Model No. | IRL6297SDTRPBF | |
| Standard price |
JPY: 343,000
USD: 2,150.07
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(4800pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRL6297SDTRPBF Dual N-Channel MOSFET, 15 A, 20 V DirectFET, HEXFET, 3 + Tab-Pin SA Infineon IRL6297SDTRPBF](https://aimg.as-1.co.jp/c/63/8400/07/63840007.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)