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• 63-8399-71 IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon　IRFH5210TRPBF

• AXEL GLOBAL
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• 63-8399-71 IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon　IRFH5210TRPBF

Infineon

63-8399-71　IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon　IRFH5210TRPBF

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特徴

• N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

• Quantity:1set(4000pieces)
• Channel Type:N
• Maximum Continuous Drain Current:10 A
• Maximum Drain Source Voltage:100 V
• Maximum Drain Source Resistance:14.9 mΩ
• Maximum Gate Threshold Voltage:4V
• Minimum Gate Threshold Voltage:2V
• Maximum Gate Source Voltage:-20 V, +20 V
• Package Type:PQFN
• Mounting Type:Surface Mount
• Pin Count:8
• Channel Mode:Enhancement
• Category:Power MOSFET
• Maximum Power Dissipation:104 W
• Minimum Operating Temperature:-55 °C
• CODE No.:168-5989
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Order No.	63-8399-71
Model No.	IRFH5210TRPBF
Standard price	JPY: 536,000 USD: 3,334.99 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1set(4000pieces)
Stock in Japan
Supplier Stock

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