63-8399-61 IRF8010STRLPBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRF8010STRLPBF
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63-8399-61 IRF8010STRLPBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRF8010STRLPBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 63-8399-61 IRF8010STRLPBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRF8010STRLPBF
Features
- N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:15 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:260 W
- Typical Gate Charge @ Vgs:81 nC @ 10 V
- CODE No.:168-5978
Order No. 63-8399-61 型番 IRF8010STRLPBF Standard price JPY: 218,000 USD: 1,356.40 Excange rate 1USD= 160.72JPY
Valid price in JapanQuantity 1set(800pieces) Stock in Japan 
Supplier Stock
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