63-8399-59 IRF7907TRPBF Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7907TRPBF
Features
- Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9.1 A, 11 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:13.7 mΩ, 20.5 mΩ
- Maximum Gate Threshold Voltage:2.35V
- Minimum Gate Threshold Voltage:1.35V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Series:HEXFET
- CODE No.:168-5975
| Order No. | 63-8399-59 | |
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| Model No. | IRF7907TRPBF | |
| Standard price |
JPY: 411,000
USD: 2,557.24
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(4000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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