63-8399-52 ［Discontinued］IRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9+Tab-Pin L8 Infineon IRF7779L2TRPBF
Features
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:67 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:11 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:L8
- Mounting Type:Surface Mount
- Pin Count:9 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-5968
| Order No. | 63-8399-52 | |
|---|---|---|
| Model No. | IRF7779L2TRPBF | |
| Standard price |
JPY: 2,051,000
USD: 12,761.32
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(4000pieces) | |
|
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| Stock in Japan | - | |