63-8399-51 ［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF
FeaturesFeatures class="init">
［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF 63-8399-51 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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Infineon
63-8399-51 ［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF
-
特徴
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
SpecSpec class="init">
［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF 63-8399-51 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8399-51 ［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF
-
特徴
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:124 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:3.5 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:L8
- Mounting Type:Surface Mount
- Pin Count:9 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Series:DirectFET, HEXFET
- CODE No.:168-5967
-
Order No.
63-8399-51
型番
IRF7769L1TRPBF
Standard price
JPY: 1,246,140
USD: 7,811.32
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity
1set(4000pieces)
［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF 63-8399-51 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8399-51 ［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF
-
Features
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:124 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:3.5 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:L8
- Mounting Type:Surface Mount
- Pin Count:9 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Series:DirectFET, HEXFET
- CODE No.:168-5967
-
Order No.
63-8399-51
Model No.
IRF7769L1TRPBF
Standard price
JPY: 1,246,140
USD: 7,811.32
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity
1set(4000pieces)
Stock in Japan
-
63-8399-51 ［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF
特徴
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
SpecSpec class="init">
［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF 63-8399-51 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8399-51 ［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF
-
特徴
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:124 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:3.5 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:L8
- Mounting Type:Surface Mount
- Pin Count:9 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Series:DirectFET, HEXFET
- CODE No.:168-5967
-
Order No.
63-8399-51
型番
IRF7769L1TRPBF
Standard price
JPY: 1,246,140
USD: 7,811.32
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity
1set(4000pieces)
［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF 63-8399-51 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8399-51 ［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF
-
Features
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:124 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:3.5 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:L8
- Mounting Type:Surface Mount
- Pin Count:9 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Series:DirectFET, HEXFET
- CODE No.:168-5967
-
Order No.
63-8399-51
Model No.
IRF7769L1TRPBF
Standard price
JPY: 1,246,140
USD: 7,811.32
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity
1set(4000pieces)
Stock in Japan
-
63-8399-51 ［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF
特徴
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:124 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:3.5 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:L8
- Mounting Type:Surface Mount
- Pin Count:9 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Series:DirectFET, HEXFET
- CODE No.:168-5967
| Order No. | 63-8399-51 | |||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 型番 | IRF7769L1TRPBF | |||||||||||||||||
| Standard price |
JPY: 1,246,140
USD: 7,811.32
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|||||||||||||||||
| Quantity | 1set(4000pieces) | |||||||||||||||||
63-8399-51 ［Discontinued］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBFFeatures
Spec
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