63-8399-43 IRF6648TRPBF N-Channel MOSFET, 86 A, 60 V DirectFET, HEXFET, 3 + Tab-Pin MN Infineon IRF6648TRPBF
Features
- DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm
Spec
- Quantity:1set(4800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:86 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:7 mΩ
- Maximum Gate Threshold Voltage:4.9V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:MN
- Mounting Type:Surface Mount
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:89 W
- Typical Turn-Off Delay Time:28 ns
- CODE No.:168-5958
| Order No. | 63-8399-43 | |
|---|---|---|
| Model No. | IRF6648TRPBF | |
| Standard price |
JPY: 1,045,000
USD: 6,501.99
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(4800pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|