63-8399-39 ［Discontinued］IRF40H210 N-Channel MOSFET, 201 A, 40 V HEXFET, 8-Pin PQFN Infineon IRF40H210
Features
- StrongIRFET™ Power MOSFET, Infineon. Infineon's StrongIRFET family is optimized for low R DS (on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:201 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:1.7 mΩ
- Maximum Gate Threshold Voltage:3.7V
- Minimum Gate Threshold Voltage:2.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-5952
| Order No. | 63-8399-39 | |
|---|---|---|
| Model No. | IRF40H210 | |
| Standard price |
JPY: 546,000
USD: 3,397.21
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |