63-8399-35 IRF135S203 N-Channel MOSFET, 129 A, 135 V HEXFET, 3-Pin D2PAK Infineon IRF135S203
Features
- StrongIRFET™ Power MOSFET, Infineon. Infineon's StrongIRFET family is optimized for low R DS (on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
Spec
- Quantity:1set(800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:129 A
- Maximum Drain Source Voltage:135 V
- Maximum Drain Source Resistance:8.4 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:441 W
- Maximum Operating Temperature:+175 °C
- CODE No.:168-5948
| Order No. | 63-8399-35 | |
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| Model No. | IRF135S203 | |
| Standard price |
JPY: 306,000
USD: 1,903.93
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(800pieces) | |
| Stock in Japan |
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| Supplier Stock |
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