63-8399-33 [Discontinued]IRF100B202 N-Channel MOSFET, 97 A, 100 V HEXFET, 3 + Tab-Pin TO-220 Infineon IRF100B202
Features
- StrongIRFET™ Power MOSFET, Infineon. Infineon's StrongIRFET family is optimized for low R DS (on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:97 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:8.6 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:221 W
- Typical Turn-On Delay Time:11 ns
- CODE No.:168-5946
| Order No. | 63-8399-33 | |
|---|---|---|
| Model No. | IRF100B202 | |
| Standard price |
JPY: 8,770
USD: 54.57
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRF100B202 N-Channel MOSFET, 97 A, 100 V HEXFET, 3 + Tab-Pin TO-220 Infineon IRF100B202](https://aimg.as-1.co.jp/c/63/8399/33/63839933.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)