63-8399-13 IPN50R1K4CEATMA1 N-Channel MOSFET, 4.8 A, 550 V CoolMOS CE, 3 + Tab-Pin SOT-223 Infineon IPN50R1K4CEATMA1
Features
- Infineon CoolMOS™ CE Power MOSFET
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:4.8 A
- Maximum Drain Source Voltage:550 V
- Maximum Drain Source Resistance:1.4 Ω
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:5 W
- Minimum Operating Temperature:-40 °C
- CODE No.:168-5922
| Order No. | 63-8399-13 | |
|---|---|---|
| Model No. | IPN50R1K4CEATMA1 | |
| Standard price |
JPY: 112,000
USD: 696.86
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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