63-8399-09 IPD80R1K4P7ATMA1 N-Channel MOSFET, 4 A, 800 V CoolMOS P7, 3-Pin DPAK Infineon IPD80R1K4P7ATMA1
Features
- Infineon CoolMOS™P7 Power MOSFET. The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:4 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:1.4 Ω
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:32 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-5917
| Order No. | 63-8399-09 | |
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| Model No. | IPD80R1K4P7ATMA1 | |
| Standard price |
JPY: 231,000
USD: 1,437.28
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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