63-8399-06 ［Discontinued］IPD60R800CEAUMA1 N-Channel MOSFET, 8.4 A, 650 V CoolMOS CE, 3-Pin DPAK Infineon IPD60R800CEAUMA1
Features
- Infineon CoolMOS™ CE Power MOSFET
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:8.4 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:800 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:74 W
- Maximum Operating Temperature:+150 °C
- CODE No.:168-5913
| Order No. | 63-8399-06 | |
|---|---|---|
| Model No. | IPD60R800CEAUMA1 | |
| Standard price |
JPY: 167,000
USD: 1,039.07
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
|
||
| Stock in Japan | - | |