63-8399-02 IPB60R160P6ATMA1 N-Channel MOSFET, 23.8 A, 650 V CoolMOS P6, 3-Pin D2PAK Infineon IPB60R160P6ATMA1
Features
- Infineon CoolMOS™E6/P6 series Power MOSFET. The Infineon range of CoolMOS ™ E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:23.8 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:160 mΩ
- Maximum Gate Threshold Voltage:4.5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:176 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-5906
| Order No. | 63-8399-02 | |
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| Model No. | IPB60R160P6ATMA1 | |
| Standard price |
JPY: 359,000
USD: 2,250.36
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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