63-8395-65 IXTH110N25T N-Channel MOSFET, 110 A, 250 V Trench, 3-Pin TO-247 IXYS IXTH110N25T
Features
- N-Channel Trench-Gate Power MOSFET, IXYS. Trench Gate MOSFET Technology Low on-state Resistance RDS(on) Superior avalanche ruggedness
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:110 A
- Maximum Drain Source Voltage:250 V
- Maximum Drain Source Resistance:24 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:694 W
- Length:16.26mm
- CODE No.:168-4583
| Order No. | 63-8395-65 | |
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| Model No. | IXTH110N25T | |
| Standard price |
JPY: 45,600
USD: 285.84
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
| Stock in Japan |
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| Supplier Stock |
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