63-8395-61 IXFN360N15T2 N-Channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227 IXYS IXFN360N15T2
Features
- N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:310 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:4 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-227
- Mounting Type:Surface Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.07 kW
- Minimum Operating Temperature:-55 °C
- CODE No.:168-4578
| Order No. | 63-8395-61 | |
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| Model No. | IXFN360N15T2 | |
| Standard price |
JPY: 103,000
USD: 640.87
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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