63-8395-60 IXFN360N10T N-Channel MOSFET, 360 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227 IXYS IXFN360N10T
Features
- N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:360 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:2.6 mΩ
- Maximum Gate Threshold Voltage:4.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-227
- Mounting Type:Surface Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:830 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-4577
| Order No. | 63-8395-60 | |
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| Model No. | IXFN360N10T | |
| Standard price |
JPY: 49,500
USD: 307.99
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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