63-8395-59 IXFN200N10P N-Channel MOSFET, 200 A, 100 V Polar HiPerFET, 4-Pin SOT-227B IXYS IXFN200N10P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:200 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:7.5 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-227B
- Mounting Type:Surface Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:680 W
- Typical Turn-On Delay Time:30 ns
- CODE No.:168-4576
| Order No. | 63-8395-59 | |
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| Model No. | IXFN200N10P | |
| Standard price |
JPY: 55,800
USD: 347.19
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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