63-8383-60 [Discontinued]IRF60R217 N-Channel MOSFET, 58 A, 60 V StrongIRFET, 3-Pin DPAK Infineon IRF60R217
Features
- StrongIRFET™ Power MOSFET, Infineon. Infineon's StrongIRFET family is optimized for low R DS (on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
Spec
- Quantity:1set(2000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:58 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:9.9 mΩ
- Maximum Gate Threshold Voltage:3.7V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:83 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-0943
| Order No. | 63-8383-60 | |
|---|---|---|
| Model No. | IRF60R217 | |
| Standard price |
JPY: 130,000
USD: 808.86
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(2000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRF60R217 N-Channel MOSFET, 58 A, 60 V StrongIRFET, 3-Pin DPAK Infineon IRF60R217](https://aimg.as-1.co.jp/c/63/8383/60/63838360.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)