63-8383-59 [Discontinued]IRF60B217 N-Channel MOSFET, 60 A, 60 V StrongIRFET, 3-Pin TO-220AB Infineon IRF60B217
Features
- StrongIRFET™ Power MOSFET, Infineon. Infineon's StrongIRFET family is optimized for low R DS (on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:60 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:9 mΩ
- Maximum Gate Threshold Voltage:3.7V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:83 W
- Dimensions:10.67 x 4.83 x 16.51mm
- CODE No.:145-9184
| Order No. | 63-8383-59 | |
|---|---|---|
| Model No. | IRF60B217 | |
| Standard price |
JPY: 7,490
USD: 46.60
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRF60B217 N-Channel MOSFET, 60 A, 60 V StrongIRFET, 3-Pin TO-220AB Infineon IRF60B217](https://aimg.as-1.co.jp/c/63/8383/59/63838359.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)