63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
FeaturesFeatures class="init">
［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1 63-8379-20 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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Infineon
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
-
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
SpecSpec class="init">
［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1 63-8379-20 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
-
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.4 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Number of Elements per Chip:1
- CODE No.:165-7553
-
Order No.Order No.ss="init">
［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1 63-8379-20 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
-
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.4 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Number of Elements per Chip:1
- CODE No.:165-7553
-
アズワン品番
63-8379-20
Model No.
BSZ058N03MSGATMA1
Standard price
JPY: 227,000
USD: 1,423.91
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init">
［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1 63-8379-20 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
-
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.4 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Number of Elements per Chip:1
- CODE No.:165-7553
-
アズワン品番
63-8379-20
型番
BSZ058N03MSGATMA1
標準価格
JPY: 227,000
USD: 1,423.91
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1set(5000pieces)
在庫数
-
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
SpecSpec class="init">
［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1 63-8379-20 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
-
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.4 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Number of Elements per Chip:1
- CODE No.:165-7553
-
Order No.Order No.ss="init">
［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1 63-8379-20 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
-
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.4 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Number of Elements per Chip:1
- CODE No.:165-7553
-
アズワン品番
63-8379-20
Model No.
BSZ058N03MSGATMA1
Standard price
JPY: 227,000
USD: 1,423.91
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init">
［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1 63-8379-20 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
-
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.4 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Number of Elements per Chip:1
- CODE No.:165-7553
-
アズワン品番
63-8379-20
型番
BSZ058N03MSGATMA1
標準価格
JPY: 227,000
USD: 1,423.91
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1set(5000pieces)
在庫数
-
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:6.4 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Number of Elements per Chip:1
- CODE No.:165-7553
Order No.Order No.ss="init">
63-8379-20 ［Discontinued］BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1特徴
仕様
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