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[Discontinued]BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1 63-8379-20 【AXEL GLOBAL】 アズワン
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63-8379-20 [Discontinued]BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
AXEL GLOBAL
Categories
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
63-8379-20 [Discontinued]BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
Infineon
63-8379-20 [Discontinued]BSZ058N03MSGATMA1 N-Channel MOSFET, 40 A, 30 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ058N03MSGATMA1
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Features
Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
Spec
Quantity:1set(5000pieces)
Channel Type:N
Maximum Continuous Drain Current:40 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:6.4 mΩ
Maximum Gate Threshold Voltage:2V
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:TSDSON
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.1 W
Number of Elements per Chip:1
CODE No.:165-7553
Order No.
63-8379-20
Model No.
BSZ058N03MSGATMA1
Standard price
JPY:
227,000
USD:
1,423.91
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1set(5000pieces)
Stock in Japan
-
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