63-8378-85 ［Discontinued］STH180N10F3-2 N-Channel MOSFET, 180 A, 100 V STripFET F3, 3-Pin H2PAK-2 STMicroelectronics STH180N10F3-2
Features
- N-Channel STripFET™ F3, STMicroelectronics. STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:180 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:4.5 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:H2PAK-2
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:315 W
- Typical Turn-On Delay Time:25.6 ns
- CODE No.:761-0500
| Order No. | 63-8378-85 | |
|---|---|---|
| Model No. | STH180N10F3-2 | |
| Standard price |
JPY: 660
USD: 4.11
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |