63-8353-19 SI4403CDY-T1-GE3 P-Channel MOSFET, 13.4 A, 20 V, 8-Pin SOIC Vishay SI4403CDY-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:13.4 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:5 W
- Transistor Material:Si
- CODE No.:169-5792
| Order No. | 63-8353-19 | |
|---|---|---|
| Model No. | SI4403CDY-T1-GE3 | |
| Standard price |
JPY: 236,000
USD: 1,479.35
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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