63-8352-72 [Discontinued]ON Semiconductor NGTB60N65FL2WG IGBT, 100 A 650 V, 3-Pin TO-247 NGTB60N65FL2WG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1set(30pieces)
- Maximum Continuous Collector Current:100 A
- Maximum Collector Emitter Voltage:650 V
- Maximum Gate Emitter Voltage:±20 V, ±30 V
- Maximum Power Dissipation:595 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:16.26mm
- Width:5.3mm
- Height:21.08mm
- Dimensions:16.26 x 5.3 x 21.08mm
- Gate Capacitance:7193pF
- CODE No.:145-3282
| Order No. | 63-8352-72 | |
|---|---|---|
| Model No. | NGTB60N65FL2WG | |
| Standard price |
JPY: 30,500
USD: 189.77
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
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| Stock in Japan | - | |
![[Discontinued]ON Semiconductor NGTB60N65FL2WG IGBT, 100 A 650 V, 3-Pin TO-247 NGTB60N65FL2WG](https://aimg.as-1.co.jp/c/63/8352/72/63835272.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)