63-8352-61 [Discontinued]FDV301N N-Channel MOSFET, 500 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV301N
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:500 mA
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:9 Ω
- Maximum Gate Threshold Voltage:1.06V
- Minimum Gate Threshold Voltage:0.7V
- Maximum Gate Source Voltage:+8 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:350 mW
- Typical Turn-On Delay Time:3.2 ns
- CODE No.:166-1935
| Order No. | 63-8352-61 | |
|---|---|---|
| Model No. | FDV301N | |
| Standard price |
JPY: 13,200
USD: 82.13
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDV301N N-Channel MOSFET, 500 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV301N](https://aimg.as-1.co.jp/c/63/8352/61/63835261.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)