ON Semiconductor

63-8352-60 FDV303N N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV303N

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:680 mA
  • Maximum Drain Source Voltage:25 V
  • Maximum Drain Source Resistance:450 mΩ
  • Minimum Gate Threshold Voltage:0.65V
  • Maximum Gate Source Voltage:+8 V
  • Package Type:SOT-23
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:350 mW
  • Minimum Operating Temperature:-55 °C
  • CODE No.:145-5305
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Order No. 63-8352-60
Model No. FDV303N
Standard price JPY: 42,600 USD: 265.06
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(3000pieces)
Stock in Japan
Supplier Stock