63-8351-59 STW70N60DM2 N-Channel MOSFET, 66 A, 600 V MDmesh DM2, 3-Pin TO-247 STMicroelectronics STW70N60DM2
Features
- N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:66 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:42 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:446 W
- Number of Elements per Chip:1
- CODE No.:168-5904
| Order No. | 63-8351-59 | |
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| Model No. | STW70N60DM2 | |
| Standard price |
JPY: 76,300
USD: 478.28
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
| Stock in Japan |
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| Supplier Stock |
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