63-8351-53 [Discontinued]STW33N60DM2 N-Channel MOSFET, 25 A, 650 V MDmesh DM2, 3-Pin TO-247 STMicroelectronics STW33N60DM2
Features
- N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:25 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:130 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:190 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-5898
| Order No. | 63-8351-53 | |
|---|---|---|
| Model No. | STW33N60DM2 | |
| Standard price |
JPY: 13,800
USD: 86.50
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
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| Stock in Japan | - | |
![[Discontinued]STW33N60DM2 N-Channel MOSFET, 25 A, 650 V MDmesh DM2, 3-Pin TO-247 STMicroelectronics STW33N60DM2](https://aimg.as-1.co.jp/c/63/8351/53/63835153.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)