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STMicroelectronics

63-8351-52　STW28N60DM2 N-Channel MOSFET, 22 A, 650 V MDmesh DM2, 3-Pin TO-247 STMicroelectronics　STW28N60DM2

Features

  • N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified

Spec

  • Quantity:1set(30pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:22 A
  • Maximum Drain Source Voltage:650 V
  • Maximum Drain Source Resistance:160 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:TO-247
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:190 W
  • Typical Gate Charge @ Vgs:39 nC @ 10 V
  • CODE No.:168-5897
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Order No. 63-8351-52
Model No. STW28N60DM2
Standard price JPY: 18,000 USD: 112.83
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(30pieces)
Stock in Japan
Supplier Stock

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