63-8351-50 [Discontinued]STP33N60DM2 N-Channel MOSFET, 25 A, 650 V MDmesh DM2, 3-Pin TO-220 STMicroelectronics STP33N60DM2
Features
- N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:25 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:130 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:190 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-5893
| Order No. | 63-8351-50 | |
|---|---|---|
| Model No. | STP33N60DM2 | |
| Standard price |
JPY: 14,200
USD: 89.01
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(50pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]STP33N60DM2 N-Channel MOSFET, 25 A, 650 V MDmesh DM2, 3-Pin TO-220 STMicroelectronics STP33N60DM2](https://aimg.as-1.co.jp/c/63/8351/50/63835150.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)