63-8351-49 [Discontinued]STP18N60DM2 N-Channel MOSFET, 12 A, 600 V MDmesh DM2, 3-Pin TO-220 STMicroelectronics STP18N60DM2
Features
- N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:290 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:90 W
- Typical Turn-On Delay Time:13.5 ns
- CODE No.:168-5891
| Order No. | 63-8351-49 | |
|---|---|---|
| Model No. | STP18N60DM2 | |
| Standard price |
JPY: 10,500
USD: 65.33
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(50pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]STP18N60DM2 N-Channel MOSFET, 12 A, 600 V MDmesh DM2, 3-Pin TO-220 STMicroelectronics STP18N60DM2](https://aimg.as-1.co.jp/c/63/8351/49/63835149.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)