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STMicroelectronics

63-8351-40　STB18N60DM2 N-Channel MOSFET, 12 A, 600 V MDmesh DM2, 3-Pin D2PAK STMicroelectronics　STB18N60DM2

Features

  • N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified

Spec

  • Quantity:1set(1000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:12 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:290 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:90 W
  • Dimensions:9.35 x 10.4 x 4.6mm
  • CODE No.:166-0942
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Order No. 63-8351-40
Model No. STB18N60DM2
Standard price JPY: 376,000 USD: 2,356.92
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(1000pieces)
Stock in Japan
Supplier Stock

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