63-8351-40 STB18N60DM2 N-Channel MOSFET, 12 A, 600 V MDmesh DM2, 3-Pin D2PAK STMicroelectronics STB18N60DM2
Features
- N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified
仕様
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:12 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:290 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:90 W
- Dimensions:9.35 x 10.4 x 4.6mm
- CODE No.:166-0942
| アズワン品番 | 63-8351-40 | |
|---|---|---|
| 型番 | STB18N60DM2 | |
| 標準価格 |
JPY: 376,000
USD: 2,339.47
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
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